Semiconductor - Ion Implantation
Phoenix Nuclear Labs

Phoenix’s core ion source and accelerator technology has been modified for ion implantation applications in the semiconductor industry.

 

 

Phoenix’s core ion source and accelerator technology has been modified for ion implantation applications in the semiconductor industry, with an emphasis on providing high current H+ and He+ ion beams at voltages ranging from 50-400 kV. In addition, a high current, extended lifetime negative ion source based on Phoenix’s core ion source technology is also under development. H- beam current above 1 mA at 30 kV has been demonstrated, and work is ongoing to further increase beam current and test the system with other ion species, including He- and N-. The lifetime of this source is expected to be several months to years.